SQD19P06-60L
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TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
30
24
18
V GS = 10 V thru 5 V
30
24
18
12
V GS = 4 V
12
6
V GS = 2 V , 1 V
6
T C = 25 °C
T C = 125 °C
0
V GS = 3 V
0
T C = - 55 °C
0
3
6
9
12
15
0
2
4
6
8
10
25
V DS - D r a i n - t o - S o u r c e V o l t a g e ( V )
Output Characteristics
0.25
V GS - Gate-to-Source V oltage ( V )
Transfer Characteristics
20
15
10
T C = - 55 ° C
T C = 25 ° C
0.20
0.15
0.10
V GS = 4.5 V
T C = 125 ° C
V GS = 10 V
5
0
0.05
0
0
5
10
15
20
25
0
6
12
18
24
30
2000
1500
V GS - Gate-to-Source V oltage ( V )
Transconductance
10
8
I D - Drain Current (A)
On-Resistance vs. Drain Current
I D = 19 A
V DS = 30 V
C iss
6
1000
4
500
2
C oss
C rss
0
0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
V DS - Drain-to-Source V oltage ( V )
Capacitance
Q g - Total Gate Charge (nC)
Gate Charge
S11-2065-Rev. C, 24-Oct-11
3
Document Number: 65158
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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